MBN750H65E2 | HITACHI
- Team HCW
- Mar 20, 2024
- 1 min read
Updated: Mar 21, 2024
IGBT Module
Features:
Soft switching behavior & low conduction loss: Soft low-injection punch-through high conductivity IGBT.
Low driving power due to low input capacitance MOS gate.
Low noise recovery: Ultra soft fast recovery diode.
High thermal fatigue durability
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