MBN750H65E2 | HITACHITeam HCWMar 20, 20241 min readUpdated: Mar 21, 2024IGBT ModuleFeatures:Soft switching behavior & low conduction loss: Soft low-injection punch-through high conductivity IGBT.Low driving power due to low input capacitance MOS gate.Low noise recovery: Ultra soft fast recovery diode.High thermal fatigue durability
IGBT ModuleFeatures:Soft switching behavior & low conduction loss: Soft low-injection punch-through high conductivity IGBT.Low driving power due to low input capacitance MOS gate.Low noise recovery: Ultra soft fast recovery diode.High thermal fatigue durability
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